PLENARY & INVITED SPEAKERS

Plenary speakers

Hiroshi Amano, Nagoya University
In memory of the late Prof. Isamu Akasaki as a pioneer and the role of nitride semiconductors in the next 30 years

Aurélien David, Google
TBA

Åsa Haglund, Chalmers University of Technology
TBA

Debdeep Jena, Cornell University
Controlling electronic polarization in polar and ferroelectric nitride semiconductor heterostructures for electronic and photonic devices

Masahiro Kobayashi, Sumitomo Electric
TBA

Elison Matioli, EPFL
Pushing the limits of GaN electronics

Takashi Mukai, Nichia Corporation
Progress and future prospects of InGaN-based high-efficiency, high-power laser diodes

Invited speakers

Oliver Ambacher, University of Freiburg
Structural, elastic and thermodynamic properties of cubic and hexagonal ScxAl1-xN crystals

Robert Armitage, Lumileds
Recent advances in nitride LED technology for green-to-red wavelengths

Michal Bockowski, Institute of High Pressure Physics
Towards GaN substrates for high-power electronics devices

Jonas Lähnemann, PDI Forschungsverbund Berlin e.V.
Revisiting the determination of the carrier diffusion length in GaN from cathodoluminescence spectroscopy

Frank Brunner, Ferdinand-Braun-Institut GmbH, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB, AIXTRON, Siltronic AG and Robert Bosch GmbH
Vertical GaN power transistors on low-cost substrates: opportunities and challenges

Guillaume Cassabois, University of Montpellier
Polytypism in hexagonal boron nitride: an optical study

Kevin J Chen, The Hong Kong University of Science and Teechnology
Processing and design techniques for reliability enhancement of lateral GaN HEMTs

Jr-Tai Chen, SweGaN,
TBA

Shigefusa Chichibu , Tohoku University
Impacts of vacancy clusters on the luminescence dynamics in ion-implanted GaN on GaN structures

Srabanti Chowdhury, Stanford University
On making GaN more efficient for RF applications

Steven P. DenBaars, University of California, Santa Barbara
High efficiency RGB micro-LEDs based entirely on III-Nitride alloys

Theeradetch Detchprohm, Georgia institute of Technology
Development of AlGaN based deep UV avalanche photodetectors toward their intrinsic characteristics

W. Alan Doolittle , Georgia Institute of Technology
Substantial doping and electrical contacts to AlN electronic and optoelectronic devices

Hajime Fujikura, Sumitomo Chemical
Recent progress of HVPE-based GaN on GaN technology

 Mitsuru Funato, Kyoto University
InGaN-based LEDs on arbitrary three-dimensional GaN templates toward tailored spectral control

Nicolas Grandjean, EPFL
Nanoscale investigation of point defects and carrier dynamics in InGaN/GaN quantum wells

Thierry Guillet, University of Montpellier
GaN-based ridge polariton lasers

Tamotsu Hashizume, Hokkaido University
MOS interface technologies for high-power and high-frequency GaN transistors

Masahiro Horita, Nagoya University
Characterization of nitrogen-displacement-related traps in GaN

Ryota Ishii, Kyoto University
Fundamental optical properties of AlN revealed by deep-ultraviolet spectroscopy

Motoaki Iwaya, Meijo University
Progress in the development of UV-B laser diodes fabricated on sapphire substrates

Tetsu Kachi, Nagoya University
TBA

Ryuji Katayama, Osaka University
Far-UV emission from nitride-based second harmonic generation devices

Jong Kyu Kim, Pohang University of Science and Technology
Observation of suspended AA-stacked hexagonal boron nitride grown on GaN substrate by metal-organic chemical vapor deposition

Emmanouil Kioupakis, University of Michigan
Insights on the efficiency and luminescence spectrum of visible LEDs from predictive calculations

Hirotsugu Kobayashi, Asahi Kasei Corporation
Far UV-C LEDs on AlN substrates with high wall-plug efficiency and long lifetime

Tim Kolbe, Ferdinand-Braun-Institut and Technische Universität Berlin
Advances in the epitaxial growth of far-ultraviolet C light emitting diodes

Martin Kuball, University of Bristol
TBA

Yoshinao Kumagai, Tokyo University of Agriculture and Technology, Tokuyama Corporation, Polish Academy of Sciences and Fujitsu Limited
High-speed growth of thick AlN homoepitaxial layers by HVPE for mass production of high-quality AlN wafers

Hao-Chung Kuo, National Yang Ming Chiao Tung University

Maki Kushimoto, Nagoya University
Recent progress of deep ultraviolet LDs

Yun-Li (Charles) Li, PlayNitride
Performance of microLED chip and display for emerging applications

Matteo Meneghini, University of Padova
GaN Vertical Devices: challenges for performance and stability

Zetian Mi, University of Michigan
AlScN/GaN ferroelectric HEMT

Umesh Mishra University of California, Santa Barbara
TBD
Yusuke Mori, Osaka University
TBA

Okhyun Nam, Tech University of Korea
Growth and characterization of AlGaN/AlN based power electronic devices

Susumu Noda, Kyoto University
Progress of photonic-crystal surface-emitting lasers (PCSELs)

Kazuhiro Ohkawa, King Abdullah University of Science and Technology
InGaN-based red micro-LEDs via micro-flow-channel metalorganic vapor-phase epitaxy
Rachel Oliver, University of Cambridge
Insights into porous GaN from electron microscopy

Tomas Palacios, Massachusetts Institute of Technology
TBA

Yoshiki Saito, Toyoda Gosei Co., Ltd.
Recent developments for high efficiency for deep UV LEDs
Leo Schowalter, Nagoya University
The development of pseudomorphic AlGaN on native AlN substrates for UVC and far UVC device applications

Bo Shen, Peking University
TBA

Keisuke Shinohara, Teledyne Technologies
3D GaN transistor design utilizing high-mobility 2DEG For millimeter-wave applications

Zlatko Sitar, NC State University
TBA

James S. Speck, University of California, Santa Barbara
TBA

Takashi Taniguchi, National Institute for Materials Science
Boron nitride single crystals obtained under high pressure and their impurity control

Kenjiro Uesugi, Mie University
Progress in UV-C LEDs on face-to-face annealed sputter-deposited AlN templates

Chris G. Van de Walle, University of California, Santa Barbara
Defect-assisted nonradiative recombination in nitrides

Xinqiang Wang, Peking University
Quasi-van der Waals epitaxy of III-nitride semiconductors on graphene

Claude Weisbuch, University of California, Santa Barbara
Physics of disorder and carrier localization in nitride alloys
Tim Wernicke, Technische Universität Berlin
Recent progress GaN based microled for visible light communication
Thomas Wunderer, PARC
Hybrid photonic integrated III-N chip lasers

Atsushi Yamada, Sumitomo Electric Inc.
Current status of high output power GaN-based HEMTs on AlN substrates