PLENARY & INVITED SPEAKERS

Plenary speakers

Hiroshi Amano, Nagoya University
Tribute to our predecessor, the late Professor Isamu Akasaki, and the role of nitrides in establishing an earth-friendly, comfortable, convenient and people-friendly society

Aurélien David, Google
Revisiting the physics of III-Nitrides LEDs: myths and facts

Åsa Haglund, Chalmers University of Technology
Vertical-cavity surface-emitting lasers at the end of the rainbow

Debdeep Jena, Cornell University
Controlling electronic polarization in polar and ferroelectric nitride semiconductor heterostructures for electronic and photonic devices

Ken Nakata, Sumitomo Electric
Recent progress of GaN HEMT for future communication

Elison Matioli, EPFL
Pushing the limits of GaN electronics: emerging technologies for high-performance devices

Takashi Mukai, Nichia Corporation
Progress and future prospects of InGaN-based high-efficiency, high-power laser diodes

Invited speakers

Robert Armitage, Lumileds
Recent advances in nitride LED technology for green-to-red wavelengths

Michal Bockowski, Institute of High Pressure Physics
Towards GaN substrates for high-power electronic devices

Julien Brault, CNRS
Growth and transfer of quantum dots UV heterostructure emitting at 280nm using van der Waals epitaxy on hBN

Frank Brunner, Ferdinand-Braun-Institut
Vertical GaN power transistors on low-cost substrates: opportunities and challenges

Guillaume Cassabois, University of Montpellier
Polytypism in hexagonal boron nitride: an optical study

Kevin J Chen, The Hong Kong University of Science and Technology
Processing and design techniques for reliability enhancement of lateral GaN HEMTs

Jr-Tai Chen, SweGaN,
Progress of buffer-free GaN-on-SiC HEMT heterostructures for RF and power applications

 Zhaoying Chen, Peking University
 High-efficiency InGaN red mini/micro-LEDs on sapphire toward full-color nitride displays
Shigefusa F. Chichibu, Tohoku University
Impacts of vacancy clusters on the luminescence dynamics in Mg-implanted GaN on GaN structures

Srabanti Chowdhury, Stanford University
On making GaN more efficient for RF applications
Juergen Christen, University of Magdeburg
GaN quantum dots in resonant cavity micropillars as deep UV single photon sources
Steven P. DenBaars, University of California, Santa Barbara
Recent advances in III-nitrides for microLEDs and laser diode

Theeradetch Detchprohm, Georgia institute of Technology
Development of AlGaN based deep-ultraviolet avalanche photodetectors toward their intrinsic characteristics

W. Alan Doolittle , Georgia Institute of Technology
Semiconducting AlN electrical devices

Hajime Fujikura, Sumitomo Chemical
Recent progress of HVPE-based GaN on GaN technology

 Mitsuru Funato, Kyoto University
InGaN-based LEDs on arbitrary three-dimensional GaN templates toward tailored spectral control

Nicolas Grandjean, EPFL
Nanoscale investigation of point defects and carrier dynamics in InGaN/GaN quantum wells

Thierry Guillet, University of Montpellier
GaN-based waveguide polariton lasers: from quasi-CW to mode-locked lasers

Tatsushi Hamaguchi, Sony Semiconductor Solutions Corporation
Polarization and modes control of GaN-based VCSELs with curved mirror

 Robert Hamwey, University of California, Santa Barbara
 Low sheet resistance n-polar InAlGaN/GaN HEMT
Tamotsu Hashizume, Nagoya University and Hokkaido University
MOS interface technologies for high-power and high-frequency GaN transistors

Masahiro Horita, Nagoya University
Characterization of nitrogen-displacement-related traps in GaN

Ryota Ishii, Kyoto University
Fundamental optical properties of AlN revealed by deep-ultraviolet spectroscopy

Motoaki Iwaya, Meijo University
Progress in the development of UV-B laser diodes fabricated on sapphire substrates

Hailing Jiang, Peking University
 Atomic scale visualization defect induced localized vibration in III-nitrides

 Tetsu Kachi, Nagoya University
Vertical GaN power devices using selective area doping with ion implantation

Ryuji Katayama, Osaka University
Nitride-semiconductor-based wavelength converters

 Masakazu Kanechika, Nagoya University
A high channel mobility and a normally-off operation of m-plane GaN trench MOSFET using an AlSiO/AlN gate stack deposited by ALD

Jong Kyu Kim, Pohang University of Science and Technology
Observation of suspended AA-stacked hexagonal boron nitride grown on GaN substrate by metal-organic chemical vapor deposition

Emmanouil Kioupakis, University of Michigan
Impact of alloy disorder and polarization fields on the efficiency and luminescence spectrum of visible LEDs from predictive calculations

Hirotsugu Kobayashi, Asahi Kasei Corporation
Far UV-C LEDs on AlN substrates with high wall-plug efficiency and long lifetime

Tim Kolbe, Ferdinand-Braun-Institut
Advances in the epitaxial growth of far-ultraviolet C light emitting diodes

 Takao Kozaka, the University of Tokyo
 Fabrication of AlN/AlGaN/AlN multi-channel structures with sputtering-regrown highly degenerate n+-GaN ohmic contacts

Martin Kuball, University of Bristol
GaN-on-diamond transistors: challenges and opportunities

Yoshinao Kumagai, Tokyo University of Agriculture and Technology, Tokuyama Corporation, Polish Academy of Sciences and Fujitsu Limited
High-speed growth of thick AlN homoepitaxial layers by HVPE for mass production of high-quality AlN wafers
Maki Kushimoto, Nagoya University
Recent progress of deep ultraviolet laser diodes on AlN substrate

Jonas Lähnemann, Paul Drude Institute
Revisiting the determination of the carrier diffusion length in GaN from cathodoluminescence spectroscopy

 Tzu-Yi Lee, National Yang Ming Chiao Tung University
 Introduction to high-speed visible light communication using yellow-green and red micro-LEDs

 Yun-Li (Charles) Li, PlayNitride
Performance of microLED chip and display for emerging applications

Matteo Meneghini, University of Padova
GaN vertical devices: challenges for high performance and stability

Zetian Mi, University of Michigan
Ferroelectric nitride semiconductors: epitaxy, properties, and emerging device applications

Umesh Mishra, University of California, Santa Barbara
GaN power electronics: Game on!
Yusuke Mori, Osaka University
Recent progress of bulk GaN growth by Na-flux method

Okhyun Nam, Tech University of Korea
Growth of AlGaN/AlN based power electronic devices

 Shugo Nitta, Nagoya University
 Catalytic enhancement of ammonia reaction by trimethylgallium and its reactants in MOVPE analyzed by TOF-MS isotope tracking

Susumu Noda, Kyoto University
Progress of photonic-crystal surface-emitting lasers (PCSELs)

Kazuhiro Ohkawa, King Abdullah University of Science and Technology
InGaN-based red micro-LEDs via micro-flow-channel metalorganic vapor-phase epitaxy
Rachel Oliver, University of Cambridge
Insights into porous GaN from electron microscopy

Tomas Palacios, Massachusetts Institute of Technology
III-nitride electronics for extreme environment operation 

Yoshiki Saito, Toyoda Gosei Co., Ltd.
Recent developments in high efficiency for deep UV LEDs
Chandrashekhar P. Savant, Cornell University
First demonstration of ferroelectricity and high-K dielectric C constant in ultrawide bandgap AlBN MBE films
Leo Schowalter, Nagoya University
The development of pseudomorphic AlGaN on native AlN substrates for UVC and far UVC device applications

Bo Shen, Peking University
Recent progress on the epitaxial growth, doping of AlGaN with high Al fraction and the fabrication of deep UV LEDs

Keisuke Shinohara, Teledyne Scientific and Imaging
Scaling challenges in millimeter-wave GaN HEMTs for high-power, high-efficiency, and high-linearity operation
Zlatko Sitar, NC State University
Unlocking the AlN technology one step at a time

James S. Speck, University of California, Santa Barbara
Progress in electroemission spectroscopy of GaN LEDs

Takashi Taniguchi, National Institute for Materials Science
Boron nitride single crystals obtained under high pressure and their impurity control

Kenjiro Uesugi, Mie University
Progress in UV-C LEDs on face-to-face annealed sputter-deposited AlN templates

Chris G. Van de Walle, University of California, Santa Barbara
Defect-assisted nonradiative recombination in nitrides

Xinqiang Wang, Peking University
Quasi-van der Waals epitaxy of III-nitride semiconductors on graphene

Claude Weisbuch, University of California, Santa Barbara
Physics of disorder and carrier localization in nitride alloys
Tim Wernicke, Technische Universität Berlin
Analyzing carrier transport and radiative recombination in AlGaN based UVC LEDs
Thomas Wunderer, PARC
Hybrid photonic integrated III-N chip lasers

Atsushi Yamada, Fujitsu Limited
Current status of high output power GaN-based HEMTs on AlN substrates

Mohamed Yassine, University of Freiburg
Correct modeling of polarization in wz-AlScN